May 7, 2013

An Integration Technology for RF and Microwave Circuits Based on Interconnect Programming

Paper Presentations ppts topics with full doc abstract on An Integration Technology for RF and Microwave Circuits Based on Interconnect Programming (Seminar Paper Presentations)
Abstract:
A configurable integration technology suitable forimplementing application specific radio-frequency (RF) andmicrowave circuits is presented. This post fabrication integration scheme is compatible with complementary metal–oxide–semiconductor(CMOS) technology and utilizes room temperature deposited Parylene-N as low loss and low permittivity dielectricmaterial. Interconnect lines, inductors, and transmission linesfabricated on top of arrays of prefabricated 0130nm and 90 nmCMOS transistors coated with Parylene-N are configured to design interconnect programmable RF and microwave circuits.

Thetechnology is used to demonstrate three proof of concept interconnectprogrammable narrowband amplifiers. These amplifiers havecenter frequencies of 5.5, 6.4, and 18 GHz with forward gain S12of 16.6, 11, and 18.7 dB, respectively. Fabrication simplicity and programmable nature of this technology compared to standard application specific integrated circuit (ASIC) fabrication lowersthe cost and time to market of individual ASIC chip.

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